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@ARTICLE{Jaschinsky:4121,
      author       = {Jaschinsky, P. and Wensorra, J. and Lepsa, M. I. and
                      Myslivecek, J. and Voigtländer, B.},
      title        = {{N}anoscale charge transport measurements using a
                      double-tip scanning tunneling microscope},
      journal      = {Journal of applied physics},
      volume       = {104},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-4121},
      pages        = {094307},
      year         = {2008},
      note         = {The authors would like to express their appreciation of the
                      excellent technical assistance of Peter Coenen, Helmut
                      Stollwerk, and the machine shop of IBN. J. M. acknowledges
                      the support of the Ministry of Education of the Czech
                      Republic, Project No. MSM 0021620834. We would like to thank
                      Justin W. Wells for helpful discussions about the
                      Si(111)(7x7) surface.},
      abstract     = {We demonstrate the ability of a double-tip scanning
                      tunneling microscope (STM) combined with a scanning electron
                      microscope (SEM) to perform charge transport measurements on
                      the nanoscale. The STM tips serve as electric probes that
                      can be precisely positioned relative to the surface
                      nanostructures using the SEM control and the height
                      reference provided by the tunneling contact. The tips work
                      in contact, noncontact, and tunneling modes. We present
                      vertical transport measurements on nanosized GaAs/AlAs
                      resonant tunneling diodes and lateral transport measurements
                      on the conductive surface of 7 x 7 reconstructed Si(111).
                      The high stability of the double-tip STM allows
                      nondestructive electrical contacts to surfaces via the
                      tunneling gaps. We performed two-point electrical
                      measurements via tunneling contacts on the Si(111) (7x7)
                      surface and evaluated them using a model for the charge
                      transport on this surface. (C) 2008 American Institute of
                      Physics. [DOI: 10.1063/1.3006891]},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT / IBN-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)VDB801},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000260941700103},
      doi          = {10.1063/1.3006891},
      url          = {https://juser.fz-juelich.de/record/4121},
}