Nanoscale charge transport measurements using a double-tip scanning tunneling microscope

Jaschinsky, P.; Myslivecek, J.; Lepsa, M. I.; Wensorra, J.; Voigtländer, B.

doi:10.1063/1.3006891

Journal Article

Nanoscale charge transport measurements using a double-tip scanning tunneling microscope

Jaschinsky, P. ; Wensorra, J.FZJ* ; Lepsa, M. I.FZJ* ; Myslivecek, J. ; Voigtländer, B.FZJ*

2008
American Institute of Physics Melville, NY

Journal of applied physics 104, 094307 (2008) [10.1063/1.3006891]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17232 doi:10.1063/1.3006891

Abstract: We demonstrate the ability of a double-tip scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM) to perform charge transport measurements on the nanoscale. The STM tips serve as electric probes that can be precisely positioned relative to the surface nanostructures using the SEM control and the height reference provided by the tunneling contact. The tips work in contact, noncontact, and tunneling modes. We present vertical transport measurements on nanosized GaAs/AlAs resonant tunneling diodes and lateral transport measurements on the conductive surface of 7 x 7 reconstructed Si(111). The high stability of the double-tip STM allows nondestructive electrical contacts to surfaces via the tunneling gaps. We performed two-point electrical measurements via tunneling contacts on the Si(111) (7x7) surface and evaluated them using a model for the charge transport on this surface. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006891]

Keyword(s): J

Classification:

Physics, Applied

Note: The authors would like to express their appreciation of the excellent technical assistance of Peter Coenen, Helmut Stollwerk, and the machine shop of IBN. J. M. acknowledges the support of the Ministry of Education of the Czech Republic, Project No. MSM 0021620834. We would like to thank Justin W. Wells for helpful discussions about the Si(111)(7x7) surface.

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