Home > Publications database > High deposition rate for mc-Si:H absorber layers using VHF PECVD at elevated discharge power and deposition pressure > RIS |
TY - CONF AU - Lambertz, A. AU - Vetterl, O. AU - Finger, F. TI - High deposition rate for mc-Si:H absorber layers using VHF PECVD at elevated discharge power and deposition pressure M1 - PreJuSER-41318 PY - 2001 N1 - Record converted from VDB: 12.11.2012 Y2 - 22 Oct 2001 M2 - München, LB - PUB:(DE-HGF)24 UR - https://juser.fz-juelich.de/record/41318 ER -