Home > Publications database > High deposition rate for mc-Si:H absorber layers using VHF PECVD at elevated discharge power and deposition pressure > print

001     41318
005     20240708133624.0
037 _ _ |a PreJuSER-41318
100 1 _ |a Lambertz, A.
|0 P:(DE-Juel1)VDB5906
|b 0
|u FZJ
111 2 _ |c München
|d 2001-10-22
245 _ _ |a High deposition rate for mc-Si:H absorber layers using VHF PECVD at elevated discharge power and deposition pressure
260 _ _ |c 2001
295 1 0 |a 17th European Photovoltaic Solar Energy Conference and Exhibition
336 7 _ |a Poster
|0 PUB:(DE-HGF)24
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Output Types/Conference Poster
|2 DataCite
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a CONFERENCE_POSTER
|2 ORCID
336 7 _ |a INPROCEEDINGS
|2 BibTeX
500 _ _ |a Record converted from VDB: 12.11.2012
536 _ _ |a Grundlagen und Technologie von Dünnschichtsolarzellen
|c 30.90.0
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK70
|x 0
700 1 _ |a Vetterl, O.
|0 P:(DE-Juel1)VDB2541
|b 1
|u FZJ
700 1 _ |a Finger, F.
|0 P:(DE-Juel1)130238
|b 2
|u FZJ
909 C O |o oai:juser.fz-juelich.de:41318
|p VDB
913 1 _ |k 30.90.0
|v Grundlagen und Technologie von Dünnschichtsolarzellen
|l Energieumwandlungstechniken
|b Energietechnik
|0 G:(DE-Juel1)FUEK70
|x 0
914 1 _ |y 2001
920 1 _ |k IPV
|l Institut für Photovoltaik
|d 31.12.2006
|g IPV
|0 I:(DE-Juel1)VDB46
|x 0
970 _ _ |a VDB:(DE-Juel1)5677
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a poster
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IMD-3-20101013
981 _ _ |a I:(DE-Juel1)IEK-5-20101013

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