%0 Journal Article
%A Fitsilis, M.
%A Kohlstedt, H.
%A Waser, R.
%A Ullmann, M.
%T A new concept for using ferroelectric transistors in nonvolatile memories
%J Integrated ferroelectrics
%V 60
%@ 1058-4587
%C London [u.a.]
%I Taylor & Francis
%M PreJuSER-41464
%P 45 - 58
%D 2004
%Z Record converted from VDB: 12.11.2012
%X A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000221024200004
%R 10.1080/10584580490441197
%U https://juser.fz-juelich.de/record/41464