Journal Article

PreJuSER-41464

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png A new concept for using ferroelectric transistors in nonvolatile memories

Fitsilis, M.FZJ* ; Kohlstedt, H.FZJ* ; Waser, R.FZJ* ; Ullmann, M.

2004
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/10584580490441197

Abstract: A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate.

Keyword(s): J ; ferroelectric field effect transistor (auto) ; FeFET (auto) ; MFIS (auto) ; BSIM3v3 (auto) ; non-volatile memory (auto) ; non-destructive readout (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004

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