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000041464 084__ $$2WoS$$aEngineering, Electrical & Electronic
000041464 084__ $$2WoS$$aPhysics, Applied
000041464 084__ $$2WoS$$aPhysics, Condensed Matter
000041464 1001_ $$0P:(DE-Juel1)VDB25896$$aFitsilis, M.$$b0$$uFZJ
000041464 245__ $$aA new concept for using ferroelectric transistors in nonvolatile memories
000041464 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2004
000041464 300__ $$a45 - 58
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000041464 440_0 $$02659$$aIntegrated Ferroelectrics$$v60$$x1058-4587
000041464 500__ $$aRecord converted from VDB: 12.11.2012
000041464 520__ $$aA new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate.
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000041464 65320 $$2Author$$aferroelectric field effect transistor
000041464 65320 $$2Author$$aFeFET
000041464 65320 $$2Author$$aMFIS
000041464 65320 $$2Author$$aBSIM3v3
000041464 65320 $$2Author$$anon-volatile memory
000041464 65320 $$2Author$$anon-destructive readout
000041464 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b1$$uFZJ
000041464 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000041464 7001_ $$0P:(DE-HGF)0$$aUllmann, M.$$b3
000041464 773__ $$0PERI:(DE-600)2037916-X$$a10.1080/10584580490441197$$gVol. 60, p. 45 - 58$$p45 - 58$$q60<45 - 58$$tIntegrated ferroelectrics$$v60$$x1058-4587$$y2004
000041464 8567_ $$uhttp://dx.doi.org/10.1080/10584580490441197
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000041464 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
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