TY  - JOUR
AU  - Fitsilis, M.
AU  - Kohlstedt, H.
AU  - Waser, R.
AU  - Ullmann, M.
TI  - A new concept for using ferroelectric transistors in nonvolatile memories
JO  - Integrated ferroelectrics
VL  - 60
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-41464
SP  - 45 - 58
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000221024200004
DO  - DOI:10.1080/10584580490441197
UR  - https://juser.fz-juelich.de/record/41464
ER  -