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@ARTICLE{Fitsilis:41464,
      author       = {Fitsilis, M. and Kohlstedt, H. and Waser, R. and Ullmann,
                      M.},
      title        = {{A} new concept for using ferroelectric transistors in
                      nonvolatile memories},
      journal      = {Integrated ferroelectrics},
      volume       = {60},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-41464},
      pages        = {45 - 58},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A new concept for using a ferroelectric field effect
                      transistor in a memory configuration is presented without
                      the requirement of a negative voltage or an erase operation.
                      The transistor is designed so that the accumulation sets in
                      at a lower gate source voltage making it possible to reverse
                      the polarization without applying a negative pulse to the
                      gate.},
      keywords     = {J (WoSType)},
      cin          = {CNI / IFF-IEM},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB321},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000221024200004},
      doi          = {10.1080/10584580490441197},
      url          = {https://juser.fz-juelich.de/record/41464},
}