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| Hauptseite > Publikationsdatenbank > A new concept for using ferroelectric transistors in nonvolatile memories > print |
| Hauptseite > Publikationsdatenbank > A new concept for using ferroelectric transistors in nonvolatile memories > print |
| 001 | 41464 | ||
| 005 | 20180210135058.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1080/10584580490441197 |
| 024 | 7 | _ | |2 WOS |a WOS:000221024200004 |
| 037 | _ | _ | |a PreJuSER-41464 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Fitsilis, M. |b 0 |u FZJ |0 P:(DE-Juel1)VDB25896 |
| 245 | _ | _ | |a A new concept for using ferroelectric transistors in nonvolatile memories |
| 260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2004 |
| 300 | _ | _ | |a 45 - 58 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 60 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a ferroelectric field effect transistor |
| 653 | 2 | 0 | |2 Author |a FeFET |
| 653 | 2 | 0 | |2 Author |a MFIS |
| 653 | 2 | 0 | |2 Author |a BSIM3v3 |
| 653 | 2 | 0 | |2 Author |a non-volatile memory |
| 653 | 2 | 0 | |2 Author |a non-destructive readout |
| 700 | 1 | _ | |a Kohlstedt, H. |b 1 |u FZJ |0 P:(DE-Juel1)VDB3107 |
| 700 | 1 | _ | |a Waser, R. |b 2 |u FZJ |0 P:(DE-Juel1)131022 |
| 700 | 1 | _ | |a Ullmann, M. |b 3 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1080/10584580490441197 |g Vol. 60, p. 45 - 58 |p 45 - 58 |q 60<45 - 58 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 60 |y 2004 |x 1058-4587 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1080/10584580490441197 |
| 909 | C | O | |o oai:juser.fz-juelich.de:41464 |p VDB |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |y 2004 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)57235 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
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