%0 Journal Article
%A Bobisch, C. A.
%A Bannani, A.
%A Koroteev, Y. M.
%A Bihlmayer, G.
%A Chulkov, E. V.
%A Möller, R.
%T Conservation of the lateral electron momentum at a metal semiconductor interface studied by ballistic electron emission microscopy
%J Physical review letters
%V 102
%@ 0031-9007
%C College Park, Md.
%I APS
%M PreJuSER-4253
%P 136807
%D 2009
%Z Financial support by the Deutsche Forschungsgemeinschaft through the SFB 616 "Energy Dissipation at Surfaces'' is gratefully acknowledged.
%X We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi/Si(100)-(2x1) and 0.68 eV for the Bi/Si(111)-(7x7). At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi/Si(111)-(7x7), while no increase occurs for Bi/Si(100)-(2x1). These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000264888600056
%R 10.1103/PhysRevLett.102.136807
%U https://juser.fz-juelich.de/record/4253