Journal Article

PreJuSER-4253

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conservation of the lateral electron momentum at a metal semiconductor interface studied by ballistic electron emission microscopy

Bobisch, C. A. ; Bannani, A. ; Koroteev, Y. M. ; Bihlmayer, G.FZJ* ; Chulkov, E. V. ; Möller, R.

2009
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/7199  doi:10.1103/PhysRevLett.102.136807

Abstract: We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi/Si(100)-(2x1) and 0.68 eV for the Bi/Si(111)-(7x7). At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi/Si(111)-(7x7), while no increase occurs for Bi/Si(100)-(2x1). These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface.

Keyword(s): J

Note: Financial support by the Deutsche Forschungsgemeinschaft through the SFB 616 "Energy Dissipation at Surfaces'' is gratefully acknowledged.

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (IFF-1)
2. Quanten-Theorie der Materialien (IAS-1)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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