TY  - JOUR
AU  - Bobisch, C. A.
AU  - Bannani, A.
AU  - Koroteev, Y. M.
AU  - Bihlmayer, G.
AU  - Chulkov, E. V.
AU  - Möller, R.
TI  - Conservation of the lateral electron momentum at a metal semiconductor interface studied by ballistic electron emission microscopy
JO  - Physical review letters
VL  - 102
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-4253
SP  - 136807
PY  - 2009
N1  - Financial support by the Deutsche Forschungsgemeinschaft through the SFB 616 "Energy Dissipation at Surfaces'' is gratefully acknowledged.
AB  - We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi/Si(100)-(2x1) and 0.68 eV for the Bi/Si(111)-(7x7). At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi/Si(111)-(7x7), while no increase occurs for Bi/Si(100)-(2x1). These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000264888600056
DO  - DOI:10.1103/PhysRevLett.102.136807
UR  - https://juser.fz-juelich.de/record/4253
ER  -