Journal Article

PreJuSER-42954

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ab initio calculations of interface effects in tunnelling through MgO barriers on Fe(100)

Wortmann, D.FZJ* ; Bihlmayer, G.FZJ* ; Blügel, S.FZJ*

2004
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0953-8984/16/48/056

Abstract: The tunnel-magneto-resistance (TMR) effect has been extensively studied in the last couple of years. While some experiments showed a strong dependence on the metal-insulator interface in these systems, most theoretical work gave little emphasis to the complicated interplay between electronic structure, atomic structure and the tunnelling process. We present calculations of the atomic structure of Fe/MgO/Fe(001) interfaces and its influence on the electronic structure. The tunnel current is calculated using the Landauer approach to describe the electron transport.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Theorie I (IFF-TH-I)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2004

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