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000042954 084__ $$2WoS$$aPhysics, Condensed Matter
000042954 1001_ $$0P:(DE-Juel1)131042$$aWortmann, D.$$b0$$uFZJ
000042954 245__ $$aAb initio calculations of interface effects in tunnelling through MgO barriers on Fe(100)
000042954 260__ $$aBristol$$bIOP Publ.$$c2004
000042954 300__ $$a5819 - 5822
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000042954 440_0 $$03703$$aJournal of Physics: Condensed Matter$$v16$$x0953-8984
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000042954 520__ $$aThe tunnel-magneto-resistance (TMR) effect has been extensively studied in the last couple of years. While some experiments showed a strong dependence on the metal-insulator interface in these systems, most theoretical work gave little emphasis to the complicated interplay between electronic structure, atomic structure and the tunnelling process. We present calculations of the atomic structure of Fe/MgO/Fe(001) interfaces and its influence on the electronic structure. The tunnel current is calculated using the Landauer approach to describe the electron transport.
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000042954 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, G.$$b1$$uFZJ
000042954 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b2$$uFZJ
000042954 773__ $$0PERI:(DE-600)1472968-4$$a10.1088/0953-8984/16/48/056$$gVol. 16, p. 5819 - 5822$$p5819 - 5822$$q16<5819 - 5822$$tJournal of physics / Condensed matter$$v16$$x0953-8984$$y2004
000042954 8567_ $$uhttp://dx.doi.org/10.1088/0953-8984/16/48/056
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