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@ARTICLE{Wortmann:42954,
author = {Wortmann, D. and Bihlmayer, G. and Blügel, S.},
title = {{A}b initio calculations of interface effects in tunnelling
through {M}g{O} barriers on {F}e(100)},
journal = {Journal of physics / Condensed matter},
volume = {16},
issn = {0953-8984},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {PreJuSER-42954},
pages = {5819 - 5822},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {The tunnel-magneto-resistance (TMR) effect has been
extensively studied in the last couple of years. While some
experiments showed a strong dependence on the
metal-insulator interface in these systems, most theoretical
work gave little emphasis to the complicated interplay
between electronic structure, atomic structure and the
tunnelling process. We present calculations of the atomic
structure of Fe/MgO/Fe(001) interfaces and its influence on
the electronic structure. The tunnel current is calculated
using the Landauer approach to describe the electron
transport.},
keywords = {J (WoSType)},
cin = {CNI / IFF-TH-I},
ddc = {530},
cid = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB30},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK242},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000226025300057},
doi = {10.1088/0953-8984/16/48/056},
url = {https://juser.fz-juelich.de/record/42954},
}