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000043840 0247_ $$2DOI$$a10.1109/LPT.2003.809264
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000043840 084__ $$2WoS$$aEngineering, Electrical & Electronic
000043840 084__ $$2WoS$$aOptics
000043840 084__ $$2WoS$$aPhysics, Applied
000043840 1001_ $$0P:(DE-HGF)0$$aMikulics, V. V.$$b0
000043840 245__ $$aHigh Speed Photoconductive Switch based on Low-Temperature GaAs Transferred on Si Substrate
000043840 260__ $$aNew York, NY$$bIEEE$$c2003
000043840 300__ $$a528 - 530
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000043840 440_0 $$011561$$aIEEE Photonics Technology Letters$$v15$$x1041-1135
000043840 500__ $$aRecord converted from VDB: 12.11.2012
000043840 520__ $$aIn this letter, we report high-speed photoconductive switches based on low-temperature (LT) grown GaAs on Si substrate. Epitaxially grown LT GaAs was separated from its substrate, transferred on an SiO2-coated Si substrate and integrated with a transmission line. The 10 x 20-mum(2) switches exhibit high breakdown voltage and low dark currents (<10(-7) A at 100 V). The photoresponse at 810 nm shows electrical transients with similar to0.55-ps full-width at half-maximum and similar to0.37-ps decay time, both independent on the bias voltage up to the tested limit of 120,V. The photoresponse amplitude increases up to similar to0.7 V with increased bias and the signal bandwith is similar to500 GHz. The freestanding LT GaAs switches are best suited for ultrafast optoelectronic testing since they can be placed at virtually any point on the test circuit.
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000043840 65320 $$2Author$$acoplanar waveguide
000043840 65320 $$2Author$$agallium arsenide
000043840 65320 $$2Author$$aliftoff technique
000043840 65320 $$2Author$$amolecular beam epitaxy
000043840 65320 $$2Author$$aphotoconductive device
000043840 65320 $$2Author$$aphotodetector
000043840 7001_ $$0P:(DE-HGF)0$$aZheng, X.$$b1
000043840 7001_ $$0P:(DE-Juel1)VDB5644$$aAdam, R.$$b2$$uFZJ
000043840 7001_ $$0P:(DE-HGF)0$$aSobolewski, R.$$b3
000043840 7001_ $$0P:(DE-Juel1)VDB5426$$aKordos, P.$$b4$$uFZJ
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