Journal Article

PreJuSER-43840

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High Speed Photoconductive Switch based on Low-Temperature GaAs Transferred on Si Substrate

Mikulics, V. V. ; Zheng, X. ; Adam, R.FZJ* ; Sobolewski, R. ; Kordos, P.FZJ*

2003
IEEE New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2165  doi:10.1109/LPT.2003.809264

Abstract: In this letter, we report high-speed photoconductive switches based on low-temperature (LT) grown GaAs on Si substrate. Epitaxially grown LT GaAs was separated from its substrate, transferred on an SiO2-coated Si substrate and integrated with a transmission line. The 10 x 20-mum(2) switches exhibit high breakdown voltage and low dark currents (<10(-7) A at 100 V). The photoresponse at 810 nm shows electrical transients with similar to0.55-ps full-width at half-maximum and similar to0.37-ps decay time, both independent on the bias voltage up to the tested limit of 120,V. The photoresponse amplitude increases up to similar to0.7 V with increased bias and the signal bandwith is similar to500 GHz. The freestanding LT GaAs switches are best suited for ultrafast optoelectronic testing since they can be placed at virtually any point on the test circuit.

Keyword(s): J ; coplanar waveguide (auto) ; gallium arsenide (auto) ; liftoff technique (auto) ; molecular beam epitaxy (auto) ; photoconductive device (auto) ; photodetector (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2003
Notes: Nachtrag
Notes: This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp

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