TY  - JOUR
AU  - Mikulics, V. V.
AU  - Zheng, X.
AU  - Adam, R.
AU  - Sobolewski, R.
AU  - Kordos, P.
TI  - High Speed Photoconductive Switch based on Low-Temperature GaAs Transferred on Si Substrate
JO  - IEEE photonics technology letters
VL  - 15
SN  - 1041-1135
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-43840
SP  - 528 - 530
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - In this letter, we report high-speed photoconductive switches based on low-temperature (LT) grown GaAs on Si substrate. Epitaxially grown LT GaAs was separated from its substrate, transferred on an SiO2-coated Si substrate and integrated with a transmission line. The 10 x 20-mum(2) switches exhibit high breakdown voltage and low dark currents (<10(-7) A at 100 V). The photoresponse at 810 nm shows electrical transients with similar to0.55-ps full-width at half-maximum and similar to0.37-ps decay time, both independent on the bias voltage up to the tested limit of 120,V. The photoresponse amplitude increases up to similar to0.7 V with increased bias and the signal bandwith is similar to500 GHz. The freestanding LT GaAs switches are best suited for ultrafast optoelectronic testing since they can be placed at virtually any point on the test circuit.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000181868900012
DO  - DOI:10.1109/LPT.2003.809264
UR  - https://juser.fz-juelich.de/record/43840
ER  -