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@ARTICLE{Mikulics:43840,
      author       = {Mikulics, V. V. and Zheng, X. and Adam, R. and Sobolewski,
                      R. and Kordos, P.},
      title        = {{H}igh {S}peed {P}hotoconductive {S}witch based on
                      {L}ow-{T}emperature {G}a{A}s {T}ransferred on {S}i
                      {S}ubstrate},
      journal      = {IEEE photonics technology letters},
      volume       = {15},
      issn         = {1041-1135},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-43840},
      pages        = {528 - 530},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this letter, we report high-speed photoconductive
                      switches based on low-temperature (LT) grown GaAs on Si
                      substrate. Epitaxially grown LT GaAs was separated from its
                      substrate, transferred on an SiO2-coated Si substrate and
                      integrated with a transmission line. The 10 x 20-mum(2)
                      switches exhibit high breakdown voltage and low dark
                      currents (<10(-7) A at 100 V). The photoresponse at 810 nm
                      shows electrical transients with similar to0.55-ps
                      full-width at half-maximum and similar to0.37-ps decay time,
                      both independent on the bias voltage up to the tested limit
                      of 120,V. The photoresponse amplitude increases up to
                      similar to0.7 V with increased bias and the signal bandwith
                      is similar to500 GHz. The freestanding LT GaAs switches are
                      best suited for ultrafast optoelectronic testing since they
                      can be placed at virtually any point on the test circuit.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Optics / Physics,
                      Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181868900012},
      doi          = {10.1109/LPT.2003.809264},
      url          = {https://juser.fz-juelich.de/record/43840},
}