001     43840
005     20200423204022.0
017 _ _ |a This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp
024 7 _ |a 10.1109/LPT.2003.809264
|2 DOI
024 7 _ |a WOS:000181868900012
|2 WOS
024 7 _ |a 2128/2165
|2 Handle
037 _ _ |a PreJuSER-43840
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Optics
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Mikulics, V. V.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a High Speed Photoconductive Switch based on Low-Temperature GaAs Transferred on Si Substrate
260 _ _ |a New York, NY
|b IEEE
|c 2003
300 _ _ |a 528 - 530
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a IEEE Photonics Technology Letters
|x 1041-1135
|0 11561
|v 15
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In this letter, we report high-speed photoconductive switches based on low-temperature (LT) grown GaAs on Si substrate. Epitaxially grown LT GaAs was separated from its substrate, transferred on an SiO2-coated Si substrate and integrated with a transmission line. The 10 x 20-mum(2) switches exhibit high breakdown voltage and low dark currents (<10(-7) A at 100 V). The photoresponse at 810 nm shows electrical transients with similar to0.55-ps full-width at half-maximum and similar to0.37-ps decay time, both independent on the bias voltage up to the tested limit of 120,V. The photoresponse amplitude increases up to similar to0.7 V with increased bias and the signal bandwith is similar to500 GHz. The freestanding LT GaAs switches are best suited for ultrafast optoelectronic testing since they can be placed at virtually any point on the test circuit.
536 _ _ |a Kondensierte Materie
|c M02
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK242
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a coplanar waveguide
653 2 0 |2 Author
|a gallium arsenide
653 2 0 |2 Author
|a liftoff technique
653 2 0 |2 Author
|a molecular beam epitaxy
653 2 0 |2 Author
|a photoconductive device
653 2 0 |2 Author
|a photodetector
700 1 _ |a Zheng, X.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Adam, R.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB5644
700 1 _ |a Sobolewski, R.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Kordos, P.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5426
773 _ _ |a 10.1109/LPT.2003.809264
|g Vol. 15, p. 528 - 530
|p 528 - 530
|q 15<528 - 530
|0 PERI:(DE-600)2025386-2
|t IEEE photonics technology letters
|v 15
|y 2003
|x 1041-1135
856 4 _ |u https://juser.fz-juelich.de/record/43840/files/61630.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/43840/files/61630.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/43840/files/61630.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/43840/files/61630.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:43840
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
913 1 _ |k M02
|v Kondensierte Materie
|l Kondensierte Materie
|b Materie
|0 G:(DE-Juel1)FUEK242
|x 0
914 1 _ |a Nachtrag
|y 2003
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |2 StatID
|0 StatID:(DE-HGF)0510
|a OpenAccess
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
970 _ _ |a VDB:(DE-Juel1)61630
980 _ _ |a VDB
980 _ _ |a JUWEL
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-3-20110106


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