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000043842 0247_ $$2DOI$$a10.1088/0953-8984/16/17/006
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000043842 084__ $$2WoS$$aPhysics, Condensed Matter
000043842 1001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b0$$uFZJ
000043842 245__ $$aFormation of Si/Ge Nanostructures at Surfaces by Self-organization
000043842 260__ $$aBristol$$bIOP Publ.$$c2004
000043842 300__ $$as1535 - s1551
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000043842 440_0 $$03703$$aJournal of Physics: Condensed Matter$$v16$$x0953-8984
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000043842 520__ $$aThe growth of kinetically self-organized 2D islands in Si/Si(111) epitaxy is described. The island size distribution for this system was measured using scanning tunnelling microscopy (STM). The influence of surface reconstructions on growth kinetics is studied directly using a method of simultaneous deposition and STM scanning. For the case of growth of Si islands on Si(111), lateral growth of rows of the width of the 7 x 7 reconstruction unit cell at the edges of two-dimensional islands leads to the formation of 'magic' island sizes. The evolution of the size and shape of individual {105} faceted Ge islands (hut clusters) on Si(001) is measured during growth. A slower growth rate is observed when an island grows to larger sizes. This behaviour can be explained by kinetically self-limiting growth. The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at pre-existing defects is studied. The step flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in STM images for Si and Ge. Also different kinds of two-dimensional Si/Ge nanostructure such as alternating Si and Ge nanorings having a width of 5-10 nm were grown.
000043842 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000043842 7001_ $$0P:(DE-Juel1)VDB22268$$aKawamura, M.$$b1$$uFZJ
000043842 7001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b2$$uFZJ
000043842 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b3$$uFZJ
000043842 773__ $$0PERI:(DE-600)1472968-4$$a10.1088/0953-8984/16/17/006$$gVol. 16, p. s1535 - s1551$$ps1535 - s1551$$q16<s1535 - s1551$$tJournal of physics / Condensed matter$$v16$$x0953-8984$$y2004
000043842 8567_ $$uhttp://dx.doi.org/10.1088/0953-8984/16/17/006
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000043842 9141_ $$y2004
000043842 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000043842 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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