TY  - JOUR
AU  - Voigtländer, B.
AU  - Kawamura, M.
AU  - Paul, N.
AU  - Cherepanov, V.
TI  - Formation of Si/Ge Nanostructures at Surfaces by Self-organization
JO  - Journal of physics / Condensed matter
VL  - 16
SN  - 0953-8984
CY  - Bristol
PB  - IOP Publ.
M1  - PreJuSER-43842
SP  - s1535 - s1551
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - The growth of kinetically self-organized 2D islands in Si/Si(111) epitaxy is described. The island size distribution for this system was measured using scanning tunnelling microscopy (STM). The influence of surface reconstructions on growth kinetics is studied directly using a method of simultaneous deposition and STM scanning. For the case of growth of Si islands on Si(111), lateral growth of rows of the width of the 7 x 7 reconstruction unit cell at the edges of two-dimensional islands leads to the formation of 'magic' island sizes. The evolution of the size and shape of individual {105} faceted Ge islands (hut clusters) on Si(001) is measured during growth. A slower growth rate is observed when an island grows to larger sizes. This behaviour can be explained by kinetically self-limiting growth. The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at pre-existing defects is studied. The step flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in STM images for Si and Ge. Also different kinds of two-dimensional Si/Ge nanostructure such as alternating Si and Ge nanorings having a width of 5-10 nm were grown.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000221483000007
DO  - DOI:10.1088/0953-8984/16/17/006
UR  - https://juser.fz-juelich.de/record/43842
ER  -