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@ARTICLE{Voigtlnder:43842,
      author       = {Voigtländer, B. and Kawamura, M. and Paul, N. and
                      Cherepanov, V.},
      title        = {{F}ormation of {S}i/{G}e {N}anostructures at {S}urfaces by
                      {S}elf-organization},
      journal      = {Journal of physics / Condensed matter},
      volume       = {16},
      issn         = {0953-8984},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-43842},
      pages        = {s1535 - s1551},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The growth of kinetically self-organized 2D islands in
                      Si/Si(111) epitaxy is described. The island size
                      distribution for this system was measured using scanning
                      tunnelling microscopy (STM). The influence of surface
                      reconstructions on growth kinetics is studied directly using
                      a method of simultaneous deposition and STM scanning. For
                      the case of growth of Si islands on Si(111), lateral growth
                      of rows of the width of the 7 x 7 reconstruction unit cell
                      at the edges of two-dimensional islands leads to the
                      formation of 'magic' island sizes. The evolution of the size
                      and shape of individual {105} faceted Ge islands (hut
                      clusters) on Si(001) is measured during growth. A slower
                      growth rate is observed when an island grows to larger
                      sizes. This behaviour can be explained by kinetically
                      self-limiting growth. The potential formation of
                      thermodynamically stable strained islands of a specific size
                      is discussed. The formation of 2D Si/Ge nanostructures at
                      pre-existing defects is studied. The step flow growth mode
                      is used to fabricate Si and Ge nanowires with a width of 3.5
                      nm and a thickness of one atomic layer (0.3 nm) by
                      self-assembly. One atomic layer of Bi terminating the
                      surface is used to distinguish between the elements Si and
                      Ge. A difference in apparent height is measured in STM
                      images for Si and Ge. Also different kinds of
                      two-dimensional Si/Ge nanostructure such as alternating Si
                      and Ge nanorings having a width of 5-10 nm were grown.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000221483000007},
      doi          = {10.1088/0953-8984/16/17/006},
      url          = {https://juser.fz-juelich.de/record/43842},
}