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| 001 | 43842 | ||
| 005 | 20180210124537.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1088/0953-8984/16/17/006 |
| 024 | 7 | _ | |2 WOS |a WOS:000221483000007 |
| 037 | _ | _ | |a PreJuSER-43842 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Voigtländer, B. |b 0 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 245 | _ | _ | |a Formation of Si/Ge Nanostructures at Surfaces by Self-organization |
| 260 | _ | _ | |a Bristol |b IOP Publ. |c 2004 |
| 300 | _ | _ | |a s1535 - s1551 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Physics: Condensed Matter |x 0953-8984 |0 3703 |v 16 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The growth of kinetically self-organized 2D islands in Si/Si(111) epitaxy is described. The island size distribution for this system was measured using scanning tunnelling microscopy (STM). The influence of surface reconstructions on growth kinetics is studied directly using a method of simultaneous deposition and STM scanning. For the case of growth of Si islands on Si(111), lateral growth of rows of the width of the 7 x 7 reconstruction unit cell at the edges of two-dimensional islands leads to the formation of 'magic' island sizes. The evolution of the size and shape of individual {105} faceted Ge islands (hut clusters) on Si(001) is measured during growth. A slower growth rate is observed when an island grows to larger sizes. This behaviour can be explained by kinetically self-limiting growth. The potential formation of thermodynamically stable strained islands of a specific size is discussed. The formation of 2D Si/Ge nanostructures at pre-existing defects is studied. The step flow growth mode is used to fabricate Si and Ge nanowires with a width of 3.5 nm and a thickness of one atomic layer (0.3 nm) by self-assembly. One atomic layer of Bi terminating the surface is used to distinguish between the elements Si and Ge. A difference in apparent height is measured in STM images for Si and Ge. Also different kinds of two-dimensional Si/Ge nanostructure such as alternating Si and Ge nanorings having a width of 5-10 nm were grown. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Kawamura, M. |b 1 |u FZJ |0 P:(DE-Juel1)VDB22268 |
| 700 | 1 | _ | |a Paul, N. |b 2 |u FZJ |0 P:(DE-Juel1)VDB1226 |
| 700 | 1 | _ | |a Cherepanov, V. |b 3 |u FZJ |0 P:(DE-Juel1)VDB10516 |
| 773 | _ | _ | |a 10.1088/0953-8984/16/17/006 |g Vol. 16, p. s1535 - s1551 |p s1535 - s1551 |q 16 |t Journal of physics / Condensed matter |v 16 |y 2004 |x 0953-8984 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1088/0953-8984/16/17/006 |
| 909 | C | O | |o oai:juser.fz-juelich.de:43842 |p VDB |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |y 2004 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)61647 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
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