%0 Journal Article
%A Cherepanov, V.
%A Filimonov, S.
%A Myslivecek, J.
%A Voigtländer, B.
%T Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
%J Physical review / B
%V 70
%N 8
%@ 1098-0121
%C College Park, Md.
%I APS
%M PreJuSER-43843
%P 085401
%D 2004
%Z Record converted from VDB: 12.11.2012
%X We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size in the population of Ge islands shifts towards small island sizes so that the peaked scaling function degenerates to a decreasing one. The observed scaling phenomena are found to be inherent to the mechanism of growth which involves exchange and de-exchange processes of deposited atoms with the surfactant and the strong passivation of step edges in the presence of the surfactant.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000223716700075
%R 10.1103/PhysRevB.70.085401
%U https://juser.fz-juelich.de/record/43843