Journal Article

PreJuSER-43843

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors

Cherepanov, V.FZJ* ; Filimonov, S.FZJ* ; Myslivecek, J.FZJ* ; Voigtländer, B.FZJ*

2004
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10807  doi:10.1103/PhysRevB.70.085401

Abstract: We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size in the population of Ge islands shifts towards small island sizes so that the peaked scaling function degenerates to a decreasing one. The observed scaling phenomena are found to be inherent to the mechanism of growth which involves exchange and de-exchange processes of deposited atoms with the surfactant and the strong passivation of step edges in the presence of the surfactant.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004

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