TY  - JOUR
AU  - Cherepanov, V.
AU  - Filimonov, S.
AU  - Myslivecek, J.
AU  - Voigtländer, B.
TI  - Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
JO  - Physical review / B
VL  - 70
IS  - 8
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-43843
SP  - 085401
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size in the population of Ge islands shifts towards small island sizes so that the peaked scaling function degenerates to a decreasing one. The observed scaling phenomena are found to be inherent to the mechanism of growth which involves exchange and de-exchange processes of deposited atoms with the surfactant and the strong passivation of step edges in the presence of the surfactant.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000223716700075
DO  - DOI:10.1103/PhysRevB.70.085401
UR  - https://juser.fz-juelich.de/record/43843
ER  -