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@ARTICLE{Cherepanov:43843,
author = {Cherepanov, V. and Filimonov, S. and Myslivecek, J. and
Voigtländer, B.},
title = {{S}caling of submonolayer island sizes in
surfactant-mediated epitaxy of semiconductors},
journal = {Physical review / B},
volume = {70},
number = {8},
issn = {1098-0121},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-43843},
pages = {085401},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {We study submonolayer island size distributions in the
epitaxy of Si and Ge on the Si(111) surface with Bi as a
surfactant. We show that sizes of Si islands at different
growth temperatures scale to a standard scaling function
that peaks at the mean island size. Size distribution of Ge
islands demonstrates qualitatively different behavior: With
the decreasing temperature the most probable size in the
population of Ge islands shifts towards small island sizes
so that the peaked scaling function degenerates to a
decreasing one. The observed scaling phenomena are found to
be inherent to the mechanism of growth which involves
exchange and de-exchange processes of deposited atoms with
the surfactant and the strong passivation of step edges in
the presence of the surfactant.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {530},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000223716700075},
doi = {10.1103/PhysRevB.70.085401},
url = {https://juser.fz-juelich.de/record/43843},
}