Home > Publications database > Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors > print |
001 | 43843 | ||
005 | 20230426083054.0 | ||
024 | 7 | _ | |a 10.1103/PhysRevB.70.085401 |2 DOI |
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041 | _ | _ | |a eng |
082 | _ | _ | |a 530 |
084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
100 | 1 | _ | |a Cherepanov, V. |b 0 |u FZJ |0 P:(DE-Juel1)VDB10516 |
245 | _ | _ | |a Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors |
260 | _ | _ | |a College Park, Md. |b APS |c 2004 |
300 | _ | _ | |a 085401 |
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440 | _ | 0 | |a Physical Review B |x 1098-0121 |0 4919 |v 70 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size in the population of Ge islands shifts towards small island sizes so that the peaked scaling function degenerates to a decreasing one. The observed scaling phenomena are found to be inherent to the mechanism of growth which involves exchange and de-exchange processes of deposited atoms with the surfactant and the strong passivation of step edges in the presence of the surfactant. |
536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
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700 | 1 | _ | |a Filimonov, S. |b 1 |u FZJ |0 P:(DE-Juel1)VDB26536 |
700 | 1 | _ | |a Myslivecek, J. |b 2 |u FZJ |0 P:(DE-Juel1)VDB9864 |
700 | 1 | _ | |a Voigtländer, B. |b 3 |u FZJ |0 P:(DE-Juel1)VDB5601 |
773 | 1 | 8 | |a 10.1103/physrevb.70.085401 |b American Physical Society (APS) |d 2004-08-05 |n 8 |p 085401 |3 journal-article |2 Crossref |t Physical Review B |v 70 |y 2004 |x 1098-0121 |
773 | _ | _ | |a 10.1103/PhysRevB.70.085401 |g Vol. 70, p. 085401 |p 085401 |n 8 |q 70<085401 |0 PERI:(DE-600)2844160-6 |t Physical review / B |v 70 |y 2004 |x 1098-0121 |
856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevB.70.085401 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/43843/files/PhysRevB.70.085401.pdf |y OpenAccess |
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