001     43843
005     20230426083054.0
024 7 _ |a 10.1103/PhysRevB.70.085401
|2 DOI
024 7 _ |a WOS:000223716700075
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037 _ _ |a PreJuSER-43843
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Cherepanov, V.
|b 0
|u FZJ
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245 _ _ |a Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
260 _ _ |a College Park, Md.
|b APS
|c 2004
300 _ _ |a 085401
336 7 _ |a Journal Article
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440 _ 0 |a Physical Review B
|x 1098-0121
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|v 70
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We study submonolayer island size distributions in the epitaxy of Si and Ge on the Si(111) surface with Bi as a surfactant. We show that sizes of Si islands at different growth temperatures scale to a standard scaling function that peaks at the mean island size. Size distribution of Ge islands demonstrates qualitatively different behavior: With the decreasing temperature the most probable size in the population of Ge islands shifts towards small island sizes so that the peaked scaling function degenerates to a decreasing one. The observed scaling phenomena are found to be inherent to the mechanism of growth which involves exchange and de-exchange processes of deposited atoms with the surfactant and the strong passivation of step edges in the presence of the surfactant.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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542 _ _ |i 2004-08-05
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Filimonov, S.
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700 1 _ |a Myslivecek, J.
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700 1 _ |a Voigtländer, B.
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773 1 8 |a 10.1103/physrevb.70.085401
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|t Physical Review B
|v 70
|y 2004
|x 1098-0121
773 _ _ |a 10.1103/PhysRevB.70.085401
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.70.085401
856 4 _ |u https://juser.fz-juelich.de/record/43843/files/PhysRevB.70.085401.pdf
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914 1 _ |y 2004
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