%0 Conference Paper
%A Alam, A.
%A Heuken, M.
%A Juergensen, H.
%A Hardtdegen, H.
%A Marso, M.
%A Nastase, N.
%A Bay, H.
%A Kordos, P.
%A Lüth, H.
%T Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
%M PreJuSER-44674
%D 2001
%Z Record converted from VDB: 12.11.2012
%< China-Japan Workshop on Nitride Semiconductors and Materials Devices
Y2 12 Jul 2001
M2 Shanghai, China, 
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/44674