Home > Publications database > Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
 
Conference Presentation PreJuSER-44674
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Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE

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2001

China-Japan Workshop on Nitride Semiconductors and Materials Devices
Seminar, Shanghai, ChinaShanghai, China, 12 Jul 20012001-07-12


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
Research Program(s):
  1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)
  2. Ionentechnik (29.87.0)

Appears in the scientific report 2001
Notes: Nachtrag
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Document types > Presentations > Conference Presentations
Institute Collections > PGI > PGI-9
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 Record created 2012-11-13, last modified 2018-02-10
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