Home > Publications database > Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE > RIS |
TY - CONF AU - Alam, A. AU - Heuken, M. AU - Juergensen, H. AU - Hardtdegen, H. AU - Marso, M. AU - Nastase, N. AU - Bay, H. AU - Kordos, P. AU - Lüth, H. TI - Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE M1 - PreJuSER-44674 PY - 2001 N1 - Record converted from VDB: 12.11.2012 Y2 - 12 Jul 2001 M2 - Shanghai, China, LB - PUB:(DE-HGF)6 UR - https://juser.fz-juelich.de/record/44674 ER -