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@INPROCEEDINGS{Alam:44674,
      author       = {Alam, A. and Heuken, M. and Juergensen, H. and Hardtdegen,
                      H. and Marso, M. and Nastase, N. and Bay, H. and Kordos, P.
                      and Lüth, H.},
      title        = {{I}nfluence of {A}l{N} and {G}a{N} nucleation layers on the
                      properties of doped and undoped {A}l{G}a{N}/{G}a{N} {HEMT}
                      structures grown by {MOVPE}},
      reportid     = {PreJuSER-44674},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {China-Japan Workshop on Nitride Semiconductors and
                      Materials Devices},
      booktitle     = {China-Japan Workshop on Nitride
                       Semiconductors and Materials Devices},
      month         = {Jul},
      date          = {2001-07-12},
      organization  = {Shanghai, China, 12 Jul 2001},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Halbleiterschichtsysteme und Mesoskopische Strukturen /
                      Ionentechnik},
      pid          = {G:(DE-Juel1)FUEK69 / G:(DE-Juel1)FUEK67},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/44674},
}