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| Hauptseite > Publikationsdatenbank > Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE > print |
| Hauptseite > Publikationsdatenbank > Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE > print |
| 001 | 44674 | ||
| 005 | 20180210124605.0 | ||
| 037 | _ | _ | |a PreJuSER-44674 |
| 100 | 1 | _ | |a Alam, A. |b 0 |0 P:(DE-HGF)0 |
| 111 | 2 | _ | |c Shanghai, China |d 2001-07-12 |
| 245 | _ | _ | |a Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE |
| 260 | _ | _ | |c 2001 |
| 295 | 1 | 0 | |a China-Japan Workshop on Nitride Semiconductors and Materials Devices |
| 336 | 7 | _ | |a Conference Presentation |0 PUB:(DE-HGF)6 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 500 | _ | _ | |3 Presentation on a conference |
| 536 | _ | _ | |a Halbleiterschichtsysteme und Mesoskopische Strukturen |c 29.89.0 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK69 |x 0 |
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| 700 | 1 | _ | |a Heuken, M. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Juergensen, H. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Hardtdegen, H. |b 3 |u FZJ |0 P:(DE-Juel1)125593 |
| 700 | 1 | _ | |a Marso, M. |b 4 |u FZJ |0 P:(DE-Juel1)VDB5422 |
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| 700 | 1 | _ | |a Lüth, H. |b 8 |u FZJ |0 P:(DE-Juel1)VDB975 |
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| 914 | 1 | _ | |a Nachtrag |y 2001 |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 0 |
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