%0 Conference Paper
%A Nastase, N.
%A Hardtdegen, H.
%A Schmidt, R.
%A Bay, H.
%A Lüth, H.
%A Alam, A.
%A Heuken, M.
%T The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application
%M PreJuSER-44679
%D 2001
%Z Record converted from VDB: 12.11.2012
%< The Fourth International Conference on Nitride Semiconductors (ICNS-4)
Y2 16 Jul 2001
M2 Denver, Colo., 
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/44679