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Conference Presentation PreJuSER-44679
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The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

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2001

The Fourth International Conference on Nitride Semiconductors (ICNS-4)
Seminar, Denver, Colo.Denver, Colo., 16 Jul 20012001-07-16


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
Research Program(s):
  1. Halbleiterschichtsysteme und Mesoskopische Strukturen (29.89.0)

Appears in the scientific report 2001
Notes: Nachtrag
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 Record created 2012-11-13, last modified 2018-02-10
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