| Hauptseite > Publikationsdatenbank > The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application > RIS |
TY - CONF AU - Nastase, N. AU - Hardtdegen, H. AU - Schmidt, R. AU - Bay, H. AU - Lüth, H. AU - Alam, A. AU - Heuken, M. TI - The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application M1 - PreJuSER-44679 PY - 2001 N1 - Record converted from VDB: 12.11.2012 Y2 - 16 Jul 2001 M2 - Denver, Colo., LB - PUB:(DE-HGF)6 UR - https://juser.fz-juelich.de/record/44679 ER -