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@INPROCEEDINGS{Nastase:44679,
      author       = {Nastase, N. and Hardtdegen, H. and Schmidt, R. and Bay, H.
                      and Lüth, H. and Alam, A. and Heuken, M.},
      title        = {{T}he {I}nfluence of {N}ucleation {P}arameters on {G}a{N}
                      {B}uffer {L}ayer {P}roperties {U}sed for {HEMT}
                      {A}pplication},
      reportid     = {PreJuSER-44679},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {The Fourth International Conference on Nitride
                      Semiconductors (ICNS-4)},
      booktitle     = {The Fourth International Conference on
                       Nitride Semiconductors (ICNS-4)},
      month         = {Jul},
      date          = {2001-07-16},
      organization  = {Denver, Colo., 16 Jul 2001},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Halbleiterschichtsysteme und Mesoskopische Strukturen},
      pid          = {G:(DE-Juel1)FUEK69},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/44679},
}