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001     44679
005     20180210134333.0
037 _ _ |a PreJuSER-44679
100 1 _ |a Nastase, N.
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|u FZJ
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111 2 _ |c Denver, Colo.
|d 2001-07-16
245 _ _ |a The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application
260 _ _ |c 2001
295 1 0 |a The Fourth International Conference on Nitride Semiconductors (ICNS-4)
336 7 _ |a Conference Presentation
|0 PUB:(DE-HGF)6
|2 PUB:(DE-HGF)
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Presentation on a conference
536 _ _ |a Halbleiterschichtsysteme und Mesoskopische Strukturen
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700 1 _ |a Hardtdegen, H.
|b 1
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|0 P:(DE-Juel1)125593
700 1 _ |a Schmidt, R.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB4952
700 1 _ |a Bay, H.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB5486
700 1 _ |a Lüth, H.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB975
700 1 _ |a Alam, A.
|b 5
|0 P:(DE-HGF)0
700 1 _ |a Heuken, M.
|b 6
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909 C O |o oai:juser.fz-juelich.de:44679
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913 1 _ |k 29.89.0
|v Halbleiterschichtsysteme und Mesoskopische Strukturen
|l Grundlagenforschung zur Informationstechnik
|b Informationstechnik
|0 G:(DE-Juel1)FUEK69
|x 0
914 1 _ |a Nachtrag
|y 2001
920 1 _ |k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|d 31.12.2006
|g ISG
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970 _ _ |a VDB:(DE-Juel1)65439
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