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001     44679
005     20180210134333.0
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100 1 _ |a Nastase, N.
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111 2 _ |c Denver, Colo.
|d 2001-07-16
245 _ _ |a The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application
260 _ _ |c 2001
295 1 0 |a The Fourth International Conference on Nitride Semiconductors (ICNS-4)
336 7 _ |a Conference Presentation
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336 7 _ |a Conference Paper
|0 33
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336 7 _ |a Other
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336 7 _ |a LECTURE_SPEECH
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336 7 _ |a conferenceObject
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336 7 _ |a INPROCEEDINGS
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500 _ _ |a Record converted from VDB: 12.11.2012
500 _ _ |3 Presentation on a conference
536 _ _ |a Halbleiterschichtsysteme und Mesoskopische Strukturen
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700 1 _ |a Hardtdegen, H.
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700 1 _ |a Schmidt, R.
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700 1 _ |a Bay, H.
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700 1 _ |a Lüth, H.
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700 1 _ |a Alam, A.
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700 1 _ |a Heuken, M.
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|v Halbleiterschichtsysteme und Mesoskopische Strukturen
|l Grundlagenforschung zur Informationstechnik
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914 1 _ |a Nachtrag
|y 2001
920 1 _ |k ISG-1
|l Institut für Halbleiterschichten und Bauelemente
|d 31.12.2006
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