Home > Publications database > Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films > print

001     44706
005     20200423204052.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1855389
|2 DOI
024 7 _ |a WOS:000227144700039
|2 WOS
024 7 _ |a 2128/999
|2 Handle
037 _ _ |a PreJuSER-44706
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Zembilgotov, A. G.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 052903
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 86
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a A nonlinear thermodynamic theory is used to predict the equilibrium polarization states and dielectric properties of ferroelectric thin films grown on dissimilar substrates which induce anisotropic strains in the film plane. The "misfit strain-temperature" phase diagrams are constructed for single-domain PbTiO3 and Pb0.35Sr0.65TiO3 films on orthorhombic substrates. It is shown that the in plane strain anisotropy may lead to the appearance of new phases which do not form in films grown on cubic substrates. The strain-induced dielectric anisotropy in the film plane is also calculated and compared with the anisotropy observed in Pb0.35Sr0.65TiO3 films deposited on NdGaO3. (C) 2005 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Pertsev, N. A.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Böttger, U.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1063/1.1855389
|g Vol. 86, p. 052903
|p 052903
|q 86<052903
|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 86
|y 2005
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.1855389
|u http://hdl.handle.net/2128/999
856 4 _ |u https://juser.fz-juelich.de/record/44706/files/65547.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/44706/files/65547.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/44706/files/65547.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/44706/files/65547.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:44706
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |2 StatID
|0 StatID:(DE-HGF)0510
|a OpenAccess
920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB321
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
970 _ _ |a VDB:(DE-Juel1)65547
980 _ _ |a VDB
980 _ _ |a JUWEL
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)VDB381

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21