Journal Article

PreJuSER-44706

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Effect of anisotropic in-plane strains on phase states and dielectric properties of epitaxial ferroelectric thin films

Zembilgotov, A. G. ; Pertsev, N. A. ; Böttger, U. ; Waser, R.FZJ*

2005
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/999  doi:10.1063/1.1855389

Abstract: A nonlinear thermodynamic theory is used to predict the equilibrium polarization states and dielectric properties of ferroelectric thin films grown on dissimilar substrates which induce anisotropic strains in the film plane. The "misfit strain-temperature" phase diagrams are constructed for single-domain PbTiO3 and Pb0.35Sr0.65TiO3 films on orthorhombic substrates. It is shown that the in plane strain anisotropy may lead to the appearance of new phases which do not form in films grown on cubic substrates. The strain-induced dielectric anisotropy in the film plane is also calculated and compared with the anisotropy observed in Pb0.35Sr0.65TiO3 films deposited on NdGaO3. (C) 2005 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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