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000004541 084__ $$2WoS$$aEngineering, Electrical & Electronic
000004541 1001_ $$0P:(DE-HGF)0$$aMüller, R.$$b0
000004541 245__ $$aBipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
000004541 260__ $$aNew York, NY$$bIEEE$$c2009
000004541 300__ $$a620 - 622
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000004541 440_0 $$02464$$aIEEE Electron Device Letters$$v30$$x0741-3106$$y6
000004541 500__ $$aThis research was performed within the framework of the EMMA project of the European Commission (FP6-033751). The authors would like to thank L. Lamagna and M. Alia (Laboratorio Nazionale MDM, Italy) for ZrO<INF>2</INF> and Al<INF>2</INF>O<INF>3</INF>, and HfO<INF>2</INF> deposition, respectively, and A. Lamperti (Laboratorio Nazionale MDM, Italy) for characterization of metal-oxide films.
000004541 520__ $$aIn this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al2O3, HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.
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000004541 65320 $$2Author$$aCopper compounds
000004541 65320 $$2Author$$aelectrochemical devices
000004541 65320 $$2Author$$aelectronic switching systems
000004541 65320 $$2Author$$amemories
000004541 65320 $$2Author$$aorganic compounds
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000004541 7001_ $$0P:(DE-Juel1)VDB85848$$aKrebs, C.$$b1$$uFZJ
000004541 7001_ $$0P:(DE-HGF)0$$aGoux, L.$$b2
000004541 7001_ $$0P:(DE-HGF)0$$aWouters, D.J.$$b3
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000004541 8567_ $$uhttp://dx.doi.org/10.1109/LED.2009.2020521
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