Journal Article

PreJuSER-4541

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer

Müller, R. ; Krebs, C.FZJ* ; Goux, L. ; Wouters, D. J.

2009
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2009.2020521

Abstract: In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al2O3, HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.

Keyword(s): J ; Copper compounds (auto) ; electrochemical devices (auto) ; electronic switching systems (auto) ; memories (auto) ; organic compounds (auto)

Note: This research was performed within the framework of the EMMA project of the European Commission (FP6-033751). The authors would like to thank L. Lamagna and M. Alia (Laboratorio Nazionale MDM, Italy) for ZrO<INF>2</INF> and Al<INF>2</INF>O<INF>3</INF>, and HfO<INF>2</INF> deposition, respectively, and A. Lamperti (Laboratorio Nazionale MDM, Italy) for characterization of metal-oxide films.

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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Database coverage:
JCR ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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