TY  - JOUR
AU  - Müller, R.
AU  - Krebs, C.
AU  - Goux, L.
AU  - Wouters, D.J.
TI  - Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
JO  - IEEE Electron Device Letters
VL  - 30
SN  - 0741-3106
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-4541
SP  - 620 - 622
PY  - 2009
N1  - This research was performed within the framework of the EMMA project of the European Commission (FP6-033751). The authors would like to thank L. Lamagna and M. Alia (Laboratorio Nazionale MDM, Italy) for ZrO<INF>2</INF> and Al<INF>2</INF>O<INF>3</INF>, and HfO<INF>2</INF> deposition, respectively, and A. Lamperti (Laboratorio Nazionale MDM, Italy) for characterization of metal-oxide films.
AB  - In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al2O3, HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000266409200013
DO  - DOI:10.1109/LED.2009.2020521
UR  - https://juser.fz-juelich.de/record/4541
ER  -