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@ARTICLE{Mller:4541,
      author       = {Müller, R. and Krebs, C. and Goux, L. and Wouters, D.J.},
      title        = {{B}ipolar resistive electrical switching of {C}u{TCNQ}
                      memories incorporating a dedicated switching layer},
      journal      = {IEEE Electron Device Letters},
      volume       = {30},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-4541},
      pages        = {620 - 622},
      year         = {2009},
      note         = {This research was performed within the framework of the
                      EMMA project of the European Commission (FP6-033751). The
                      authors would like to thank L. Lamagna and M. Alia
                      (Laboratorio Nazionale MDM, Italy) for ZrO<INF>2</INF> and
                      Al<INF>2</INF>O<INF>3</INF>, and HfO<INF>2</INF> deposition,
                      respectively, and A. Lamperti (Laboratorio Nazionale MDM,
                      Italy) for characterization of metal-oxide films.},
      abstract     = {In this letter, we investigate bipolar resistive switching
                      of CuTCNQ-based memory cells in which various types of
                      oxides Are incorporated as dedicated switching layer (SL) in
                      a bottom $electrode\oxide\CuTCNQ\top$ electrode
                      configuration. The bottom electrode was Pt as well as
                      n(+)Si. As oxide SL, we used Al2O3, HfO2, ZrO2, and SiO2. Au
                      was employed as the top electrode. The basic memory
                      characteristics appear to be independent of the type of
                      oxide used. This gives clear indication that the materials
                      investigated as SL mainly act as matrix in which conductive
                      channels are formed and dissolved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000266409200013},
      doi          = {10.1109/LED.2009.2020521},
      url          = {https://juser.fz-juelich.de/record/4541},
}