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024 7 _ |2 DOI
|a 10.1109/LED.2009.2020521
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082 _ _ |a 620
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|a Engineering, Electrical & Electronic
100 1 _ |0 P:(DE-HGF)0
|a Müller, R.
|b 0
245 _ _ |a Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
260 _ _ |a New York, NY
|b IEEE
|c 2009
300 _ _ |a 620 - 622
336 7 _ |a Journal Article
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440 _ 0 |0 2464
|a IEEE Electron Device Letters
|v 30
|x 0741-3106
|y 6
500 _ _ |a This research was performed within the framework of the EMMA project of the European Commission (FP6-033751). The authors would like to thank L. Lamagna and M. Alia (Laboratorio Nazionale MDM, Italy) for ZrO2 and Al2O3, and HfO2 deposition, respectively, and A. Lamperti (Laboratorio Nazionale MDM, Italy) for characterization of metal-oxide films.
520 _ _ |a In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al2O3, HfO2, ZrO2, and SiO2. Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.
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653 2 0 |2 Author
|a Copper compounds
653 2 0 |2 Author
|a electrochemical devices
653 2 0 |2 Author
|a electronic switching systems
653 2 0 |2 Author
|a memories
653 2 0 |2 Author
|a organic compounds
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|a Krebs, C.
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700 1 _ |0 P:(DE-HGF)0
|a Goux, L.
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700 1 _ |0 P:(DE-HGF)0
|a Wouters, D.J.
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|t IEEE Electron Device Letters
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856 7 _ |u http://dx.doi.org/10.1109/LED.2009.2020521
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