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@ARTICLE{He:45608,
      author       = {He, J. Q. and Vasco, E. and Jia, C. L. and Dittmann, R.},
      title        = {{M}icrostructure of epitaxial {BST}/{SRO} bilayer films on
                      {S}r{T}i{O}3 substrates},
      journal      = {Journal of applied physics},
      volume       = {97},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-45608},
      pages        = {104907},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The thickness evolution of the microstructure of epitaxial
                      Ba0.7Sr0.3TiO3 thin films grown on SrRuO3/SrTiO3 was
                      investigated by means of transmission electron microscopy.
                      Within the Ba0.7Sr0.3TiO3 layer, a layered structure (three
                      sublayers) is distinguished as for the configuration of
                      lattice strain and defects. The first sublayer extends for 3
                      nm from the lattice-coherent Ba0.7Sr0.3TiO3/SrRUO3
                      interface. The second 13-nm-thick sublayer forms a
                      semicoherent interface with the first sublayer due to the
                      creation of a misfit dislocation network. The third sublayer
                      extends beyond the second sublayer exhibiting a structure
                      characterized by compact columnar features. Planar defects
                      are formed at the boundaries between such features. The
                      formation of a layered structure within the Ba0.7Sr0.3TiO3
                      films is discussed in the light of the growth modes of films
                      on lattice-mismatched substrates. (c) 2005 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
                      I:(DE-Juel1)VDB37},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000230168100169},
      doi          = {10.1063/1.1897067},
      url          = {https://juser.fz-juelich.de/record/45608},
}