Journal Article

PreJuSER-45608

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Microstructure of epitaxial BST/SRO bilayer films on SrTiO3 substrates

He, J. Q.FZJ* ; Vasco, E. ; Jia, C. L.FZJ* ; Dittmann, R.FZJ*

2005
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1094  doi:10.1063/1.1897067

Abstract: The thickness evolution of the microstructure of epitaxial Ba0.7Sr0.3TiO3 thin films grown on SrRuO3/SrTiO3 was investigated by means of transmission electron microscopy. Within the Ba0.7Sr0.3TiO3 layer, a layered structure (three sublayers) is distinguished as for the configuration of lattice strain and defects. The first sublayer extends for 3 nm from the lattice-coherent Ba0.7Sr0.3TiO3/SrRUO3 interface. The second 13-nm-thick sublayer forms a semicoherent interface with the first sublayer due to the creation of a misfit dislocation network. The third sublayer extends beyond the second sublayer exhibiting a structure characterized by compact columnar features. Planar defects are formed at the boundaries between such features. The formation of a layered structure within the Ba0.7Sr0.3TiO3 films is discussed in the light of the growth modes of films on lattice-mismatched substrates. (c) 2005 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)
3. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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